t4 - lds - 0037, rev 2 (111456) ?2011 microsemi corporation page 1 of 6 1n5518bur-1 thru 1n5546bur-1 available on commercial versions low voltage avalanche 500 mw zener diodes qualified per mil - prf - 19500/437 qualified levels : jan, jantx and jantxv description the 1n5518bur - 1 thru 1n5546bur - 1 series of 0.5 watt glass surface mount zener voltage regulators provides a selection from 3.3 to 33 volts with tolerances ranging from plus/minus 1% to 20%. the standard tolerance is plus/minus 5% with the b suffix unless ordered otherwise . t hese glass surface mount devices are available with an internal metallurgical bond option. this type of bonded zener package construction is also in jan, jantx, and jantxv military qualifications. microsemi also offers numerous other zener product s to meet higher and lower power applications. do - 213aa melf package also available in : do - 35 (do - 204ah) ( axial - leaded ) 1n5518b -1 thru 1n5546b -1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n551 8 thru 1n5546 . ? voltage tolerances of plus/minus 20%, 10%, 5%, 2%, and 1% available. see note 1 on page 3. ? internal metallurgical bond . ? jan, jantx, and jantxv qualification per mil - prf - 19500/437 available . ? rohs compliant versions available (commercial grade only) . applications / benefits ? regulates voltage over a broad operating current and temperature range . ? extensive selection from 3.3 to 33 v . ? hermetically sealed surface mount package . ? nonsensitive to esd per mil - std - 750 method 1020 . ? minimal capacitance (see figure 3 ). ? inherently radiation hard as describ ed in microsemi s micronote 050 which is available at microsemi.com . maximum ratings msc C lawrence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +175 o c steady - state power ( not e 1) (also see derating in figure 2 ) p d 0.5 w thermal resistance junction - to - end cap ( note 2) r ? j ec 100 o c /w thermal resistance junction - to - ambient ( note 2) r ? ja 30 0 o c /w thermal impedance z ? jx 35 o c /w forward voltage ? 200ma v f 1.1 v solder pad temperature @ 10 s t sp 260 o c notes : 1. a t end cap temperature t ec < 125 o c or at ambient t a < 50 o c when mounted on fr4 pc board as described for thermal resistance above (see figure 2 for derating) . derate to 0 at +175 o c. 2 . w hen mounted on fr4 pc board (1 oz cu) with recommended footprint (see last page). downloaded from: http:///
t4 - lds - 0037, rev 2 (111456) ?2011 microsemi corporation page 2 of 6 1n5518bur-1 thru 1n5546bur-1 mechanical and packaging ? case: hermetically sealed glass do - 213aa (sod80 or mll34) melf style package . ? terminals: end caps ti n- lead plated or rohs compliant matte - tin plating available (on commercial only) solderable per mil - std - 750, method 2026 . ? polarity: cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite end for zener regulation . ? mounting surface selection: the axial coefficient of expansion (coe) of t his device is approximately +6 ppm/ o c . the coe of the mounting surface system should be selected to provide a suitable match with t his device. ? marking: cathode b and only . ? tape & reel option: standard per eia - 481 -1- a with 12 mm tape (add tr suffix to part number) . consult factory for quantities. ? weight: 0.04 grams . ? see p ackage d imensions on last page . part nomenclature jan 1n5 518 b ur -1 (e3) reliability level jan = jan level jant x = jant x level jantx v = jantx v level blank = commercial jedec type number see e lectrical characteristics t able zener voltage tolerance a = 10% b = 5% c = 2% d = 1% blank = 20% rohs compliance e3 = rohs c ompliant (available on commercial grady only) blank = non - rohs c ompliant metallurgical bond - 1 = metallurgical b ond package type ur = surface mount symbols & definitions symbo l definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown knee (i zk ). i zl low regulator (zener) current: the lowest rated dc current for the specified power rating. i zm maximum regulator (zener) current: the maximum rated dc current for the specified power rat ing. v z zener voltage: the zener voltage the device will exhibit at a specified current (i z ) in its breakdown region. ? v z voltage regulation: the change in zener voltage between two specified currents or percentage of i zm . z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its bre akdown region at a specified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. downloaded from: http:///
t4 - lds - 0037, rev 2 (111456) ?2011 microsemi corporation page 3 of 6 1n5518bur-1 thru 1n5546bur-1 electrical characteristics (t a = 25 o c unless otherwise noted. based on dc measurements at thermal equilibrium; v f = 1.1 max @ if = 200 ma for all types.) jedec type number (note 1) nominal zener voltage v z @ i zt (note 2) volts test current i zt ma max. zener impedance b-c- d suffix z zt @ i zt (note 3) ohms max. reverse current (note 4) b-c- d suffix maximum dc zener current i zm (note 5) ma b-c- d suffix max. noise density at i z = 250 a n d v/ hz regulation factor ? v z (note 6) volts low v z current i zl (note 6) ma i r a v r C volts non & a- suffix b-c- d suffix 1n5518bur -1 1n5519bur -1 1n5520bur -1 1n5521bur -1 1n5522bur -1 3.3 3.6 3.9 4.3 4.7 20 20 20 20 10 26 24 22 18 22 5.0 3.0 1.0 3.0 2.0 0.90 0.90 0.90 1.0 1.5 1.0 1.0 1.0 1.5 2.0 115 105 98 88 81 0.5 0.5 0.5 0.5 0.5 0.90 0.90 0.85 0.75 0.60 2.0 2.0 2.0 2.0 1.0 1n5523bur -1 1n5524bur -1 1n5525bur -1 1n5526bur -1 1n5527bur -1 5.1 5.6 6.2 6.8 7.5 5.0 3.0 1.0 1.0 1.0 26 30 30 30 35 2.0 2.0 1.0 1.0 0.5 2.0 3.0 4.5 5.5 6.0 2.5 3.5 5.0 6.2 6.8 75 68 61 56 51 0.5 1.0 1.0 1.0 2.0 0.65 0.30 0.20 0.10 0.05 0.25 0.25 0.01 0.01 0.01 1n5528bur -1 1n5529bur -1 1n5530bur -1 1n5531bur -1 1n5532bur -1 8.2 9.1 10.0 11.0 12.0 1.0 1.0 1.0 1.0 1.0 40 45 60 80 90 0.5 0.1 0.05 0.05 0.05 6.5 7.0 8.0 9.0 9.5 7.5 8.2 9.1 9.9 10.8 46 42 38 35 32 4.0 4.0 4.0 5.0 10 0.05 0.05 0.10 0.20 0.20 0.01 0.01 0.01 0.01 0.01 1n553 3bur -1 1n5534bur -1 1n5535bur -1 1n5536bur -1 1n5537bur -1 13.0 14.0 15.0 16.0 17.0 1.0 1.0 1.0 1.0 1.0 90 100 100 100 100 0.01 0.01 0.01 0.01 0.01 10.5 11.5 12.5 13.0 14.0 11.7 12.6 13.5 14.4 15.3 29 27 25 24 22 15 20 20 20 20 0.20 0.20 0.20 0.20 0.20 0.01 0.01 0.01 0.01 0.01 1n5538bur -1 1n5539bur -1 1n5540bur -1 1n5541bur -1 1n5542bur -1 18.0 19.0 20.0 22.0 24.0 1.0 1.0 1.0 1.0 1.0 100 100 100 100 100 0.01 0.01 0.01 0.01 0.01 15.0 16.0 17.0 18.0 20.0 16.2 17.1 18.0 19.8 21.6 21 20 19 17 16 20 20 20 25 30 0.20 0.20 0.20 0.25 0.30 0.01 0.01 0.01 0.01 0.01 1n5543bur -1 1n5544bur -1 1n5545bur -1 1n5546bur -1 25.0 28.0 30.0 33.0 1.0 1.0 1.0 1.0 100 100 100 100 0.01 0.01 0.01 0.01 21.0 23.0 24.0 28.0 22.4 25.2 27.0 29.7 15 14 13 12 35 40 45 50 0.35 0.40 0.45 0.50 0.01 0.0 1 0.01 0.01 notes: 1. tolerance and voltage designation C the jedec type numbers without a letter prior to the ur - 1 suffix are +/ - 20% with guaranteed limits for only v z , i r , and v f . units with a prior to the ur - 1 suffix are +/ - 10% with guaranteed limi ts for v z , i r , and v f . units with guaranteed limits for all six parameters are indicated by a b suffix for +/ - 5.0% units, c suffix for +/ - 2.0% and d suffix for +/ - 1.0% prior to the ur - 1 suffix. 2. zener voltage (v z ) measurement C nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 o c. 3. zener impedance (z z ) measurement C the zener impedance is derived from the 60 hz ac voltage, which results when an ac current having an rms val ue equal to 10% o f the dc zener current (i zt ) is superimposed on i zt . 4. reverse current (i r ) C reverse currents are guaranteed and are measured at v r as shown on the table. 5. maximum regulator current (i zm ) C the maximum current shown is as shown in mil - prf - 19500/437. 6. max imum regulation factor ( ? v z ) C ? v z is the maximum difference between v z at i zt and v z at i zl measured with the device junction in thermal equilibrium. downloaded from: http:///
t4 - lds - 0037, rev 2 (111456) ?2011 microsemi corporation page 4 of 6 1n5518bur-1 thru 1n5546bur-1 graphs t ec , end cap temperature ( o c) figure 1 C noise density measurement circuit fi gure 2 C power derating curve zener voltage v z figure 4 figure 3 C capacitance vs. zener voltage (typical) zener diode characteristics and symbol identification noise density, (n d ) is specified in microvolt - rms per squa re - root - hertz. actual measurement is performed using a 1 khz to 3 khz frequency bandpass filter at a constant zener test current (i zt ) at 25 o c ambient temperature. typical capacitance in picofarads (pf) at zero volts at C 2 volts (v r ) p d , rated maximum dc operation (mw) downloaded from: http:///
t4 - lds - 0037, rev 2 (111456) ?2011 microsemi corporation page 5 of 6 1n5518bur-1 thru 1n5546bur-1 graphs (continued) operating current i zt (ma) figure 5 zener impedance vs . operation current (typical) zener impedance z zt (ohms) 6.8 volt 11 volt 28 volt downloaded from: http:///
t4 - lds - 0037, rev 2 (111456) ?2011 microsemi corporation page 6 of 6 1n5518bur-1 thru 1n5546bur-1 package dimensions ltr d imensions inch m illimeter min max min max bd .063 .067 1.60 1.70 bl .130 .146 3.30 3.71 e ct .016 .022 0.41 0.56 s .00 1 min 0.0 3 min no tes: 1 . d imension s ar e in inch . 2 . m illi meter s ar e gi ven fo r genera l informatio n onl y. 3 . in accordanc e w it h asme y 14.5 m, diameter s ar e equi v alen t to x sy mbolog y. pad layout inches mm a .200 5.08 b .055 1.40 c .080 2.03 downloaded from: http:///
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